Phase-contrast photolithography
exposure of a resist material through phase-shifting reticles to increase resolution of nanoscale (2.7) patterns [SOURCE: ISO/TS 80004-8 v1, 7.1.21]
exposure of a resist material through phase-shifting reticles to increase resolution of nanoscale (2.7) patterns [SOURCE: ISO/TS 80004-8 v1, 7.1.21]
This project is supported by the National Science Foundation CMMI-1025020
Center for Hierarchical Manufacturing